View bas70-07s datasheet:

BAS70-07S / BAS70-08S ® RF DETECTION DIODE FEATURES AND BENEFITS LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF application for signal detection and temperature SOT323-6L compensation. BAS70-08S SCHEMATIC DIAGRAM BAS70-07S SCHEMATIC DIAGRAM 1 6 1 6 2 5 2 5 3 4 3 4 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VR Continuous reverse voltage 70 V IF Continuous forward current 70 mA IFRM Repetitive peak forward current 70 mA IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 1 A P Power Dissipation Ta = 55°C 250 mW Tstg Storage temperature range - 65 to +150 °C Tj Maximum junction temperature 150