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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

bas7006s

BAS 70-06S Silicon Schottky Diode Array 4 • General-purpose diode for high-speed switching 5 6 • Circuit protection • Voltage clamping • High-level detecting and mixing 3 • Available with CECC quality assessment 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package BAS 70-06S 76s Q62702-A3469 1/4=C1 2/5=C2 3/6=A1/A2SOT-363 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage 70 V VR Forward current 70 mA IF 100 Surge forward current (t< 100µ s) IFSM 250 mW Total power dissipation, TS ? 72 °C Ptot Junction temperature 150 °C Tj Operating temperature range - 55 ...+150 Top Storage temperature - 55 ...+150 Tstg Thermal Resistance 1) Junction - ambient K/W RthJA ? 545 Junction - soldering point RthJS ? 310 1) Package mounted on ep

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 bas7006s Datasheet, Design, MOSFET, Power

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 bas7006s Database, Innovation, IC, Electricity

 

 
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