View bas707w datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
BAS70-07W Silicon Schottky Diodes Preliminary data • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detection and mixing ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package BAS70-07W 77s Q62702-A1186 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 70 V Forward current IF 70 mA Surge forward current (t ? 10ms) IFSM 100 Total Power dissipation Ptot mW TS ? 91 °C 250 Operating temperature range Top - 55 ... + 150 °C Storage temperature Tstg - 55 ... + 150 Thermal Resistance 1) Junction ambient RthJA ? 285 K/W Junction - soldering point RthJS ? 145 1) Package mounted on epoxy pcb 40
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bas707w Datasheet, Design, MOSFET, Power
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