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DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor November 1992 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 DESCRIPTION PINNING NPN transistor in a plastic SOT23 PIN DESCRIPTION envelope. Code: V1p It is primarily intended for use in RF 1 base fpage 3 low power amplifiers, such as in 2 emitter pocket phones, paging systems, etc. 3 collector The transistor features low current consumption (100 ľA to 1 mA); due to its high transition frequency, it also 12 has excellent wideband properties Top view MSB003 and low noise up to high frequencies. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base volt

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