View bft93 datasheet:

BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFT 93 X1s Q62702-F1063 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 3 Total power dissipation Ptot mW TS ? 58 °C 300 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering point RthJS ? 305 K/W 1) TS is measured on the collector lead at the soldering poin