All Transistors. Datasheet

 

View bga2003 2g highiip3lna datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

bga2003_2g_highiip3lna

Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. : RNR-T45-98-B-0709 Author : R. Damen Date : 1998-October-30 Department : Philips Semiconductors Product Group : Discrete SemiConductors - Nijmegen (Netherlands) Copy : APPLICATION NOTE DEMOBOARD FOR BGA2003 • Description of product BGA2003: RF transistor with internal bias circuit. Benefit is lower component count, internal compensation for temperature and diffusion spread. • Application Area Low noise amplifiers for CDMA, DECT, GSM, PCS with low component count. • Presented Application The application presents a low noise amplifier for CDMA at 1930-1990 MHz. Supply voltage is 3V and supply current 10 mA. Only output matching is needed. • Main results An amplifier has been designed and

Keywords

 bga2003 2g highiip3lna Datasheet, Design, MOSFET, Power

 bga2003 2g highiip3lna RoHS, Compliant, Service, Triacs, Semiconductor

 bga2003 2g highiip3lna Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.