View bga2012 n 1 datasheet:

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2012 1900 MHz high linear low noise amplifier Preliminary specification 2000 Aug 18 Philips Semiconductors Preliminary specification 1900 MHz high linear low noise amplifier BGA2012 FEATURES PINNING • Low current, low voltage PIN DESCRIPTION • High linearity 1 RF in • High power gain 2 VC • Low noise 3 VS • Integrated temperature compensated biasing 4 RF out • Control pin for adjustment bias current. 5, 6 GND APPLICATIONS 6 5 4 • RF front end dbook, halfpage c1 Vs c2 • Low noise amplifiers, e.g. CDMA, PHs, Dect, etc. b1 b2 DESCRIPTION RF out Vc eBias e2 1 Circuit Silicon Monolitic Microwave Integrated Circuit (MMIC) 1 2 3 amplifier consisting of an NPN double polysilicon transistor Top vi