View bsh105 3 datasheet:

Philips Semiconductors Product specification N-channel enhancement mode BSH105 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA • Very low threshold voltage d VDS = 20 V • Fast switching • Logic level compatible ID = 1.05 A • Subminiature surface mount package RDS(ON) ? 250 m? (VGS = 2.5 V) g VGS(TO) ? 0.4 V s GENERAL DESCRIPTION PINNING SOT23 N-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power 3 transistor. This device has very low 1 gate Top view threshold voltage and extremely fast switching making it ideal for 2 source battery powered applications and high speed digital interfacing. 3 drain 1 2 The BSH105 is supplied in the SOT23 subminiature surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolut