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bsh106_3

Philips Semiconductors Product specification N-channel enhancement mode BSH106 MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA • Very low threshold voltage d VDS = 20 V • Fast switching • Logic level compatible ID = 1.05 A • Subminiature surface mount package RDS(ON) ? 250 m? (VGS = 2.5 V) g VGS(TO) ? 0.4 V s GENERAL DESCRIPTION PINNING SOT363 N-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power 6 5 4 transistor. This device has very low 1,2,5,6 drain Top view threshold voltage and extremely fast switching making it ideal for 3 gate battery powered applications and high speed digital interfacing. 4 source 1 2 3 The BSH106 is supplied in the SOT363 subminiature surface mounting package. LIMITING VALUES Limiting values in accordance wi

Keywords

 bsh106 3 Datasheet, Design, MOSFET, Power

 bsh106 3 RoHS, Compliant, Service, Triacs, Semiconductor

 bsh106 3 Database, Innovation, IC, Electricity

 

 
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