View bsh108-02 datasheet:

BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH108 in SOT23. 2. Features TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications Battery management High speed switch c c Low power DC to DC converter. 4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) 3 d 2 source (s) 3 drain (d) g 12 s MBB076 Top view MSB003 SOT23 1. TrenchMOS is a trademark of Royal Philips Electronics. BSH108 Philips Semiconductors N