View bso220n datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Preliminary Data BSO 220N SIPMOS? Small-Signal-Transistor Product Summary Features Drain source voltage 20 V VDS • Dual N Channel Drain-Source on-state resistance 0.13 RDS(on) ? • Enhancement mode Continuous drain current 3.2 A ID • Avalanche rated • Logic Level • dv/dt rated Type Package Ordering Code BSO220N SO 8 Q67000-S4010 Maximum Ratings, at Tj = 25 ?C, unless otherwise specified Parameter Symbol Value Unit 3.2 A Continuous drain current, one channel active ID TA = 25 ?C 12.8 Pulsed drain current, one channel active IDpulse TA = 25 ?C Avalanche energy, single pulse 15 mJ EAS ID = 3.2 A, VDD = 25 V, RGS = 25 ? 3.2 A Avalanche current,periodic limited by Tjmax IAR 0.2 mJ Avalanche energy, periodic limited by Tjmax EAR 6 kV/µs Reverse diode dv/dt dv/dt
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