View bst122 cnv 2 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
DISCRETE SEMICONDUCTORS DATA SHEET BST122 P-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BST122 D-MOS transistor DESCRIPTION QUICK REFERENCE DATA P-channel vertical D-MOS transistor Drain-source voltage -VDS max. 60 V in SOT89 envelope and intended for Gate-source voltage (open drain) ±VGSO max. 20 V use in relay, high-speed and Drain current (DC) -ID max. 0,25 A line-transformer drivers, using Total power dissipation up to Tamb =25 °C Ptot max. 1 W SMD-technology. Drain-source ON-resistance max. 10 ? -ID = 200 mA; -VGS = 10 V RDS(on) FEATURES typ. 7.5 ? • Very low RDS(on) Transfer admittance • Direct
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