View bby5802w datasheet:

BBY 58-02W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode 2 • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment 1 • For low frequency control elements VES05991 such as TCXOs and VCXOs • Very low capacitance spread Type Marking Ordering Code Pin Configuration Package BBY 58-02W 8 Q62702-B916 1 = C 2 = A SCD-80 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 10 V Forward current IF 20 mA Operating temperature range Top -55 ...+150 °C Storage temperature Tstg -55 ...+150 Semiconductor Group 1 Jul-30-1998 Semiconductor Group 1 1998-11-01 BBY 58-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Value