View bby5803w datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
BBY 58-03W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode 2 • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment 1 VPS05176 • For low frequency control elements such as TCXOs and VCXOs • Very low capacitance spread Type Marking Ordering Code Pin Configuration Package BBY 58-03W 8 cathd.yellow Q62702-B912 1 = C 2 = A SOD-323 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage 10 V VR Forward current 20 mA IF Operating temperature range -55 ...+150 °C Top Storage temperature -55 ...+150 Tstg Semiconductor Group 1 Au -03-1998 Semiconductor Group 1 1998-11-01 BBY 58-03W Electrical Characteristics at TA = 25°C, unless otherwise specified. Par
Keywords
bby5803w Datasheet, Design, MOSFET, Power
bby5803w RoHS, Compliant, Service, Triacs, Semiconductor
bby5803w Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet