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bc237_sam

BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Emitter Voltage VCES V :BC237 50 V BC238/239 30 Collector-Emitter Voltage VCEO :BC237 45 V BC238/239 25 V Emitter-Base Voltage VEBO :BC237 6 V BC238/239 5 V Collector Current (DC) IC 100 mA Collector Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Collector 2. Base 3. Emitter ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0 :BC237 45 V :BC238/239 25 V Emitter Base Breakdown Voltage BVEBO IE=1 , IC=0 :BC237 6 V V :BC238/239 5 Collector C

Keywords

 bc237 sam Datasheet, Design, MOSFET, Power

 bc237 sam RoHS, Compliant, Service, Triacs, Semiconductor

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