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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC307/D Amplifier Transistors BC307,B,C PNP Silicon BC308C COLLECTOR BC309B 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 307 308C 309 Rating Symbol Unit CASE 29–04, STYLE 17 TO–92 (TO–226AA) Collector–Emitter Voltage VCEO –45 –25 –25 Vdc Collector–Base Voltage VCBO –50 –30 –30 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C Total Device Dissipation @ TC = 25°C PD 1.0 Watts Derate above 25°C 8.0 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W T