View bc636 sam datasheet:

BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Emitter Voltage :BC636 VCER -45 V at RBE=1Kohm :BC638 -60 V :BC640 -100 V Collector Emitter Voltage :BC636 VCES -45 V :BC638 -60 V :BC640 -100 V Collector Emitter Voltage :BC636 VCEO -45 V :BC638 -60 V :BC640 -80 V Emitter Base Voltage VEBO -5 V Collector Current IC -1 A Peak Collector Current ICP -1.5 A Base Current IB -100 mA Collector Dissipation PC 1 W Junction Temperature TJ 150 1. Emitter 2. Collector 3. Base Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit BVCEO IC= -10mA