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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC636/D High Current Transistors BC636 PNP Silicon BC638 COLLECTOR BC640 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 636 638 640 Rating Symbol Unit CASE 29–04, STYLE 14 TO–92 (TO–226AA) Collector–Emitter Voltage VCEO –45 –60 –80 Vdc Collector–Base Voltage VCBO –45 –60 –80 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –0.5 Adc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal