View bc807-16 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC807–16LT1/D BC807-16LT1 General Purpose Transistors PNP Silicon BC807-25LT1 COLLECTOR 3 BC807-40LT1 2 BASE 1 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector–Emitter Voltage VCEO –45 V Collector–Base Voltage VCBO –50 V CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Emitter–Base Voltage VEBO –5.0 V Collector Current — Continuous IC –500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board, (1) PD TA = 25°C 225 mW Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD Alumina Substrate, (2) TA = 25°C 300 mW Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Jun