View bc807 sam datasheet:

BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS SOT-23 • Sutable for AF-Driver stages and low power output stages • Complement to BC817/BC818 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Emitter Voltage :BC807 VCES -50 V :BC808 -30 V Collector Emitter Voltage :BC807 VCEO -45 V :BC808 -25 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -800 mA Collector Dissipation PC -310 mW Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit BVCEO IC= -10mA, IB=0 Collector-Emitter Breakdown Voltage -45 V :BC807 -25 V :BC808 BVCES IC= -0.1mA, IB=0 Collector-Emit