View bc817 sam datasheet:

BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS � Sutable for AF-Driver stages and low power output stages � Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Emitter Voltage :BC817 VCES 50 V :BC818 30 V Collector Emitter Voltage :BC817 VCEO 45 V :BC818 25 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 800 mA Collector Dissipation PC 310 mW Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit BVCEO IC=10mA, IB=0 Collector-Emitter Breakdown Voltage 45 :BC817 V 25 :BC818 V BVCES IC=0.1mA, IB=0 Collector-Emitter Breakdown