View bc817w 3 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC817W NPN general purpose transistor 1999 Apr 15 Product specification Supersedes data of 1997 Mar 05 Philips Semiconductors Product specification NPN general purpose transistor BC817W FEATURES PINNING • High current (max. 500 mA) PIN DESCRIPTION • Low voltage (max. 45 V). 1 base 2 emitter APPLICATIONS 3 collector • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complement: BC807W. 3 handbook, halfpage 3 MARKING 1 TYPE MARKING TYPE MARKING NUMBER CODE(1) NUMBER CODE(1) 2 BC817W 6D? BC818W 6H? 1 2 BC817-16W 6A? BC818-16W 6E? Top view MAM062 BC817-25W 6B? BC818-25W 6F? BC817-40W 6C? BC818-40W 6G? Note 1. ? = - : Made in Hong Kong. Fig.1 Si
Keywords
bc817w 3 Datasheet, Design, MOSFET, Power
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