View bc857s datasheet:

BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration Package BC 857S 3Cs Q62702-2373 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 45 V Collector-base voltage VCBO 50 Collector-emitter voltage VCES 50 Emitter-base voltage VEBO 5 DC collector current IC 100 mA Peak collector current ICM 200 Total power dissipation, TS = 115°C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction ambient RthJA ? 275 K/W Junction - soldering point RthJS ? 140