View bcp55-56 detailed specifications:
POWER MOSFET, IGBT, IC, TRIACS DATABASE
BCP55/56 MEDIUM POWER AMPLIFIER ADVANCE DATA SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED 2 FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER 3 OUTPUT STAGE 2 PNP COMPLEMENTS ARE BCP52 AND 1 BCP53 RESPECTIVELY SOT-223 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BCP55 BCP56 V Collector-Base Voltage (I = 0) 60 100 V CBO E V Collector-Emitter Voltage (I = 0) 60 80 V CEO B VCER Collector-Emitter Voltage (RBE = 1K?)60 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 1 A ICM Collector Peak Current (tp ... See More ⇒
Keywords
bcp55-56 Design, MOSFET, Power
bcp55-56 RoHS, Compliant, Service, Triacs, Semiconductor
bcp55-56 Innovation, IC, Electricity
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