View bcr185s datasheet:

BCR 185S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in biase resistor (R1=10k?, R2=47k?) Type Marking Ordering Code Pin Configuration Package BCR 185S WNs UPON INQUIRY 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEBO 6 Input on Voltage Vi(on) 20 DC collector current IC 100 mA Total power dissipation, TS = 115°C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction ambient RthJA ? 275 K/W Junction - soldering point RthJS ? 140 1) Package mounted on pcb 40m