View bcr512 datasheet:

BCR 512 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drive circuit • Built in bias resistor (R1=4.7k?, R2=4.7k?) Type Marking Ordering Code Pin Configuration Package BCR 512 XFs Q62702-C2445 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEBO 10 Input on Voltage Vi(on) 30 DC collector current IC 500 mA Total power dissipation, TS = 79 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction ambient RthJA ? 325 K/W Junction - soldering point RthJS ? 215 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Nov-27-1996 BCR 512 Electrical C