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bcv61

NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror Good thermal coupling and VBE matching High current gain Low emitter-saturation voltage Type Marking Ordering Code Pin Configuration Package1) (tape and reel) BCV 61 A 1Js Q62702-C2155 SOT-143 BCV 61 B 1Ks Q62702-C2156 BCV 61 C 1Ls Q62702-C2157 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 30 V (transistor T1) Collector-base voltage (open emitter) VCB0 30 (transistor T1) Emitter-base voltage VEBS 6 Collector current IC 100 mA Collector peak current ICM 200 Base peak current (transistor T1) IBM 200 Total power dissipation, TS ? 99 ?C2) Ptot 300 mW Junction temperature Tj 150 ?C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction

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