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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW29LT1/D General Purpose Transistors BCW29LT1 PNP Silicon COLLECTOR BCW30LT1 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage VCEO –32 Vdc CASE 318–08, STYLE 6 Collector–Base Voltage VCBO –32 Vdc SOT–23 (TO–236AB) Emitter–Base Voltage VEBO –5.0 Vdc Collector Current – Continuous IC –100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R?JA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate, (2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient R?JA 417 °C/W Junction and Storag