View bcw61a sam datasheet:

BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Cllector-Base Voltage VCBO -32 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5.0 V Collector Current IC -100 mA Collector Dissipation PC 350 mW Storage Temperature TSTG -55 ~ 150 • Refer to KS5086 for graphs 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Max Unit Collector-Emitter Breakdown Voltage BVCEO IC= -2mA, IB=0 -32 V Emitter-Base Breakdown Voltage BVEBO IE= -1 , IC=0 -5 V Collector Cut-off Current ICES VCB= -32V, VBE=0 -20 nA DC Current Gain hFE VCE= -5V, IC= -10 :BCW61B 20 BCW61C 40 BCW61D 100 VCE= -5V, IC= -2mA BCW