View bcw65alt datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW65ALT1/D General Purpose Transistor BCW65ALT1 NPN Silicon COLLECTOR 3 1 3 BASE 1 2 2 EMITTER MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol Value Unit SOT–23 (TO–236AB) Collector–Emitter Voltage VCEO 32 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 800 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ