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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW69LT1/D General Purpose Transistors BCW69LT1 PNP Silicon BCW70LT1 COLLECTOR 3 1 3 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT–23 (TO–236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc DEVICE MARKING BCW69LT1 = H1; BCW70LT1 = H2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient R?JA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate, (2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient R?JA 417 °C/W Junction an