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View bd135 sam datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

bd135_sam

BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND TO-126 SWITCHING APPLICATIONS • Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage : BD135 VCBO 45 V : BD137 60 V : BD139 80 V Collector Emitter Voltage : BD135 VCEO 45 V : BD137 60 V : BD139 80 V 1. Emitter 2.Collector 3.Base Emitter Base Voltage VEBO 5 V Collector Current (DC) IC 1.5 A Collector Current (Pulse) IC 3.0 A Base Current IB 0.5 A Collector Dissipation (TC=25 ) PC 12.5 W Collector Dissipation (TA=25 ) PC 1.25 W Junction Temperature TJ 150 Storage Temperature TSTG - 55 ~ 150 ELECTRICAL CHARACTERISTICS (TC=25 ) Characteristic Symbol Test Condition Min Typ Max Unit Collector Emitter Sustaini

Keywords

 bd135 sam Datasheet, Design, MOSFET, Power

 bd135 sam RoHS, Compliant, Service, Triacs, Semiconductor

 bd135 sam Database, Innovation, IC, Electricity

 

 
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