View bd136 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
BD136/138/140 Medium Power Linear and Switching Applications • Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 1.5 A ICP Collector Current (Pulse) - 3.0 A IB Base Current - 0.5 A PC Collector Dissipation (TC=25°C) 12.5 W PC Collector Dissipation (Ta=25°C) 1.25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symb
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