View bd175 datasheet:

BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO *Collector-Base Voltage : BD175 45 V : BD177 60 V : BD179 80 V VCEO Collector-Emitter Voltage : BD175 45 V : BD177 60 V : BD179 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 3 A ICP *Collector Current (Pulse) 7 A PC Collector Dissipation (TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage