View bd438 datasheet:

BD434/436/438 Medium Power Linear and Switching Applications � Complement to BD433, BD435 and BD437 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD434 - 22 V : BD436 - 32 V : BD438 - 45 V VCES Collector-Emitter Voltage : BD434 - 22 V : BD436 - 32 V : BD438 - 45 V VCEO Collector-Emitter Voltage : BD434 - 22 V : BD436 - 32 V : BD438 - 45 V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 4 A ICP *Collector Current (Pulse) - 7 A IB Base Current - 1 A PC Collector Dissipation (TC=25�C) 36 W TJ Junction Temperature 150 �C TSTG Storage Temperature - 65 ~ 150 �C �2001 Fairchild Semiconductor Corpora