View bf1100 datasheet:

DISCRETE SEMICONDUCTORS DATA SHEET BF1100; BF1100R Dual-gate MOS-FETs 1995 Apr 25 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R and substrate interconnected and an internal bias circuit to FEATURES ensure good cross-modulation performance during AGC. • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer CAUTION admittance to input capacitance ratio The device is supplied in an antistatic package. The • Low noise gain controlled amplifier up to 1 GHz gate-source input must be protected against static • Superior cross-modulation performance during AGC. discharge during transport or handling. APP