View bf1102 datasheet:

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102; BF1102R Dual N-channel dual gate MOS-FETs Product specification 2000 Apr 11 Supersedes data of 1999 Jul 01 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FETs BF1102; BF1102R FEATURES PINNING - SOT363 • Two low noise gain controlled amplifiers in a single DESCRIPTION package PIN BF1102 BF1102R • Specially designed for 5 V applications 1 gate 1 (1) gate 1 (1) • Superior cross-modulation performance during AGC 2 gate 2 (1 and 2) source (1 and 2) • High forward transfer admittance 3 drain (1) drain (1) • High forward transfer admittance to input capacitance 4 drain (2) drain (2) ratio. 5 source (1 and 2) gate 2 (1 and 2) 6 gate 1 (2) gate 1 (2) APPLICATIONS Gain controlled