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DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification 1997 Dec 02 Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1105; BF1105R; BF1105WR FEATURES PINNING • Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer admittance to input 1 source capacitance ratio 2 drain • Low noise gain controlled amplifier 3 gate 2 up to 1 GHz. 2 1 4 gate 1 • Internal self-biasing circuit to Top view MSB035 ensure good cross-modulation performance during AGC and good BF1105R marking code: NAp. DC stabilization. Fig.2 Simplified outline APPLICATIONS (SOT143R). • VHF and UHF application