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DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor 1996 Jun 04 Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X FEATURES PINNING - SOT343 • High power gain PIN DESCRIPTION • High efficiency 1 collector • Small size discrete power amplifier 2 emitter • 1.9 GHz operating area 3 base • Gold metallization ensures excellent reliability 4 emitter • Linear and non-linear operation. APPLICATIONS handbook, halfpage 4 3 • Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS. • Driver for DCS 1800. 1 2 DESCRIPTION Top view MBK523 NPN silicon planar epitaxial transistor encapsulated in