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DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor 1995 Apr 07 Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG11; BFG11/X FEATURES DESCRIPTION • High power gain NPN silicon planar epitaxial transistors encapsulated in a plastic, 4-pin dual-emitter SOT143 package. • High efficiency • Small size discrete power amplifier MARKING • 1.9 GHz operating area TYPE NUMBER CODE • Gold metallization ensures excellent reliability. BFG11 N72 BFG11/X N73 APPLICATIONS • Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz. PINNING PIN DESCRIPTION handbook, 2 columns 43 BFG11 (see