View bfg135a datasheet:

BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 6 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFG 135A BFG135A Q62702-F1322 1 = E 2 = B 3 = E 4 = C SOT-223 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-emitter voltage VCES 25 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2 Collector current IC 150 mA Base current IB 20 Total power dissipation Ptot mW TS ? 100 °C 1000 Junction temperature Tj 150 °C Am