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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
DISCRETE SEMICONDUCTORS DATA SHEET BFG16A NPN 2 GHz wideband transistor 1995 Sep 12 Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFG16A FEATURES PINNING fpage 4 • High power gain PIN DESCRIPTION • Good thermal stability 1 emitter • Gold metallization ensures 2 base excellent reliability. 3 emitter 4 collector DESCRIPTION NPN transistor mounted in a plastic SOT223 envelope. 1 2 3 It is primarily intended for use in MSB002 - 1 Top view wideband amplifiers, aerial amplifiers and vertical amplifiers in high speed Fig.1 SOT223. oscilloscopes. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltag
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