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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor 1995 Sep 12 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFG17A DESCRIPTION PINNING NPN wideband transistor in a PIN DESCRIPTION microminiature plastic SOT143 handbook, 2 columns 43 Code: E6 surface mounting envelope with 1 collector double emitter bonding. 2 base It is intended for use in wideband 3 emitter aerial amplifiers using SMD 12 technology. 4 emitter Top view MSB014 Fig.1 SOT143. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter - - 25 V VCEO collector-emitter voltage open base - - 15 V IC DC collector current - - 50 mA Ptot
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bfg17 Datasheet, Design, MOSFET, Power
bfg17 RoHS, Compliant, Service, Triacs, Semiconductor
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