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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D071 BFG505; BFG505/X NPN 9 GHz wideband transistors Product specification 1998 Oct 02 Supersedes data of September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG505; BFG505/X FEATURES PINNING • High power gain DESCRIPTION PIN • Low noise figure BFG505 BFG505/X • High transition frequency 1 collector collector • Gold metallization ensures excellent reliability. 2 base emitter 3 emitter base APPLICATIONS 4 emitter emitter RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). handbook, 2 columns 43 DESCRIPTION NPN silicon planar epitaxia