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DISCRETE SEMICONDUCTORS DATA SHEET BFG541 NPN 9 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 FEATURES PINNING • High power gain PIN DESCRIPTION • Low noise figure 1 emitter • High transition frequency 2 base page 4 • Gold metallization ensures 3 emitter excellent reliability. 4 collector DESCRIPTION NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular 1 2 3 telephones, cordless telephones MSB002 - 1 Top view (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater Fig.1 SOT223. amplifiers in fibre