View bfr180 datasheet:

BFR 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA • fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 180 RDs Q62702-F1296 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 8 V Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 4 mA Base current IB 0.5 Total power dissipation Ptot mW TS ? 127 °C 30 Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance 1) Junction - soldering