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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFR30LT1/D JFET Amplifiers BFR30LT1 N–Channel BFR31LT1 2 SOURCE 3 3 GATE 1 2 1 DRAIN CASE 318–08, STYLE 10 SOT–23 (TO–236AB) MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING BFR30LT1 = M1; BFR31LT1 = M2 ELECTRICAL CHARACTERISTICS (TA = 25°C unles