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bfr53_2

DISCRETE SEMICONDUCTORS DATA SHEET BFR53 NPN 2 GHz wideband transistor 1997 Oct 28 Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFR53 FEATURES PINNING fpage 3 • Very low intermodulation distortion PIN DESCRIPTION • Very high power gain. 1 base 2 emitter APPLICATIONS 3 collector 12 • Thick and thin-film circuits. Top view MSB003 Marking code: N1. DESCRIPTION Fig.1 SOT23. NPN wideband transistor in a plastic SOT23 package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCBO collector-base voltage open emitter - 18 V VCEO collector-emitter voltage open base - 10 V ICM peak collector current f > 1 MHz - 100 mA Ptot tota

Keywords

 bfr53 2 Datasheet, Design, MOSFET, Power

 bfr53 2 RoHS, Compliant, Service, Triacs, Semiconductor

 bfr53 2 Database, Innovation, IC, Electricity

 

 
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