View bfr93al datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFR93ALT1/D The RF Line NPN Silicon BFR93ALT1 High-Frequency Transistors Designed primarily for use in high–gain, low–noise, small–signal UHF and microwave amplifiers constructed with thick and thin–film circuits using surface mount components. • T1 Suffix Indicates Tape and Reel Packaging of 3,000 Units per Reel. RF TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 15 Vdc Emitter–Base Voltage VEBO 2.0 Vdc Collector Current — Continuous IC 35 mAdc Maximum Junction Temperature TJmax 150 °C Power Dissipation, Tcase = 75°C (2) PD(max) 0.306 W Derate linearly above Tcase = 75°C @ 4.08 mW/°C THERMAL CHARACTERISTICS Characteristic S