View bfr93alt datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFR93ALT1/D The RF Line NPN Silicon BFR93ALT1 High Frequency Transistors . . . designed primarily for use in high-gain, low-noise, small-signal UHF and microwave amplifiers constructed with thick and thin-film circuits using surface mount components. RF TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 12 Vdc Collector-Base Voltage VCBO 15 Vdc Emitter-Base Voltage VEBO 2.0 Vdc Collector Current — Continuous IC 35 mAdc Maximum Junction Temperature TJmax 150 °C Power Dissipation, Tcase = 75°C PD(max) 0.306 W Derate linearly above Tcase = 75°C @ 4.08 mW/°C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Storage Temperature Tstg –55 to +150 °C Thermal Resis